Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device

ABSTRACT

An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.10/761,607 filed on Jan. 21, 2004 now U.S. Pat. No. 7,288,477, whichclaims priority to Korean Patent Application No. 2003-49400, filed onJul. 18, 2003, the disclosures of which are incorporated by referenceherein in their entireties.

BACKGROUND

1. Technical Field

The present disclosure relates to a thin film transistor (TFT) for anelectro-luminescence (EL) device and a method of fabricating the same.

2. Disclosure of Related Art

Display devices have many applications and act as an interface betweenelectrical devices such as computers and televisions and a user. Displaydevices operate by changing information in the form of electricalsignals into an image and providing the image to the user.

Display devices may be classified into an emissive display device, suchas, for example, a cathode ray tube (CRT), a plasma display panel (PDP),a light emitting diode (LED), and an organic electro-luminescent displaydevice (ELD), or a non-emissive display device, such as, for example, aliquid crystal display (LCD), an electrochemical display (ECD), and anelectrophoretic image display (EPID).

CRT displays have been widely used for televisions or as a computermonitor because of their display quality and low cost. However, CRTimage displays have disadvantages, such as, for example, flickering,heavy weight, large physical size, and high power consumption.

Flat panel display devices, such as LCDs, have rapidly grown inpopularity due to their excellent display quality, low powerconsumption, small physical size, and light weight.

An electro-luminescence display device is another example of a flatpanel display device. Electro-luminescence display devices areclassified as organic electro-luminescence display devices or inorganicelectro-luminescence display devices.

Inorganic electro-luminescence display devices apply a high electric airfield to a light emitting portion, thereby exciting the light emittingportion to emit light. To generate the light, the inorganicelectro-luminescence display device needs a driving voltage from about100 to about 200 volts.

Conventional organic electro-luminescence display devices include anorganic electro-luminescent layer disposed between two electrodes. Whenan electron and a hole are injected into the electro-luminescent layerfrom the two electrodes, respectively, the organic electro-luminescencedisplay device generates an exciton by coupling the electron to thehole, and generates light when the exciton is changed from an excitationstate to a ground state. The organic electro-luminescence display deviceneeds a driving voltage from about 5 to about 20 volts to generate thelight. Organic electro-luminescence display devices havecharacteristics, such as, for example, a wide visual angles a highresponse speed, and a high contrast.

Organic electro-luminescence display devices are applicable to activematrix type display devices and to passive matrix type display devices.The active matrix type electro-luminescence display device independentlydrives organic electro-luminescence display devices corresponding topixels using a switching device such as a thin film transistor.

Conventional organic electro-luminescence display devices include asemiconductor layer (or a channel layer) or a lightly doped deposition(LDD) structure formed using a polysilicon having electrical propertiessuperior to that of amorphous silicon.

When a semiconductor layer of a thin film transistor used in aconventional organic electro-luminescence display device is formed usingpolysilicon, or is formed in the LDD structure, the thin film transistormay have a complicated structure, the manufacturing time for the thinfilm transistor may be great, and a defect ratio of the thin filmtransistor may be high because of it's complicated structure.

Accordingly, an electro-luminescence display device using amorphoussilicon and n⁺ amorphous silicon into which an n-type dopant is injectedhas been proposed.

However, when amorphous silicon and n⁺ amorphous silicon are used toform an electroluminescence display device, the amorphous silicon may bepartially etched back during patterning of the n⁺ amorphous silicon. Asa result, the amount of current flowing through the amorphous siliconmay be changed, thereby deteriorating the quality of the displayedimage.

Also, when the n⁺ amorphous silicon is etched by an etch-back process,the etch uniformity of the n⁺ amorphous silicon may be deteriorated,thereby further diminishing display quality.

SUMMARY OF THE INVENTION

An electro-luminescence device according to an embodiment of theinvention includes an electro-luminescence element and a thin filmtransistor electrically connected to the electro-luminescence element.The thin film transistor includes a gate electrode formed over asubstrate, an insulating layer all formed over the gate electrode, and afirst semiconductor pattern formed over the insulating layer. An etchstop layer is formed over the first semiconductor layer. A secondsemiconductor pattern is formed over the etch stop layer at one side ofthe etch stop layer and a third semiconductor pattern is formed over theetch stop layer at another side of the etch stop layer. A sourceelectrode is formed over the second semiconductor pattern, and a drainelectrode is formed over the third semiconductor pattern.

An electro-luminescence device according to another embodiment of theinvention includes a gate bus line extending in a first direction over asubstrate a data bus line extending in a second direction over thesubstrate, a power supply line extending parallel to the data bus lineover the substrate, and a switching transistor electrically connected tothe gate bus line. The switching transistor includes a first gateelectrode extending from the gate bus line, a first semiconductorpattern formed over the first gate electrode, and a first etch stoplayer formed over the first semiconductor pattern. A secondsemiconductor pattern is formed over the first semiconductor pattern atone side of the first etch stop layer, and a third semiconductor patternis formed over the first semiconductor pattern at another side of thefirst etch stop layer. A first source electrode is formed over thesecond semiconductor pattern and extends from the data bus line. A firstdrain electrode is formed over the third semiconductor pattern. Adriving transistor is electrically connected to the power supply line.The driving transistor includes a second gate electrode electricallyconnected to the first drain electrode of the switching transistor. Afourth semiconductor pattern is formed over the second gate electrode,and a second etch stop layer is formed over the fourth semiconductorpattern. A fifth semiconductor pattern is formed over the fourthsemiconductor pattern at one side of the second etch stop layer and asixth semiconductor pattern is formed over the fourth semiconductorpattern at another side of the second etch stop layer, A second sourceelectrode is formed over the fifth semiconductor layer and extends fromthe power supply line. A second drain electrode is formed over the sixthsemiconductor layer. An electro-luminescence element is electricallyconnected to the second drain electrode of the driving transistor.

A method of forming an electro-luminescence device according to anembodiment of the invention includes forming a gate bus line extendingin a first direction over a substrate, forming a data bus line extendingin a second direction over the substrate, forming a power supply lineextending parallel to the data bus line over the substrate, and forminga switching transistor electrically connected to the gate bus line. Thestep of forming a switching transistor includes forming a first gateelectrode extending from the gate bus line, forming a firstsemiconductor pattern over the first gate electrode, and forming a firstetch stop pattern over the first semiconductor pattern. A secondsemiconductor pattern is formed over the first semiconductor pattern atone side of the first etch stop pattern. A third semiconductor patternis formed over the first semiconductor pattern at another side of thefirst etch stop pattern. A first source electrode is formed over thesecond semiconductor pattern, and the first source electrode extendsfrom the data bus line. A first drain electrode is formed over the thirdsemiconductor pattern. A driving transistor is electrically connected tothe power supply line. The step of forming a driving transistor includesforming a second gate electrode electrically connected to the firstdrain electrode of the switching transistor, forming a fourthsemiconductor pattern over the second gate electrode, and forming asecond etch stop pattern over the fourth semiconductor pattern. A fifthsemiconductor pattern is formed over the fourth semiconductor pattern atone side of the second etch stop pattern, and a sixth semiconductorpattern is formed over the fourth semiconductor pattern at another sideof the second etch stop pattern. A second source electrode is formedover the fifth semiconductor layer, and the second source electrodeextends from the power supply line. A second drain electrode is formedover the sixth semiconductor layer. An electro-luminescence element iselectrically connected to the second drain electrode of the drivingtransistor.

In at least one embodiment of the invention, the gate bus line, thefirst gate electrode and the second gate electrode are formedsimultaneously by etching a gate metal thin layer.

In at least one embodiment of the inventions the first and second etchstop patterns are formed simultaneously by etching an etch stop layer.

In at least one embodiment of the invention, the data bus line the powersupply line, the first and second drain electrodes, and the first andsecond source electrodes are formed simultaneously by etching asource/drain metal thin layer formed over first and second semiconductorlayers. The first, second, third, fourth, fifth and sixth semiconductorpatterns are formed simultaneously by etching the first and secondsemiconductor layers using the data bus line, the power supply line, thefirst and second drain electrodes and the first and second sourceelectrodes as a mask, and the first and second etch stop patternsprevent portions of the first and second semiconductor layers from beingetched.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will become readily apparent by reference to thefollowing detailed description when considered in conjunction with theaccompanying drawings wherein:

FIG. 1 is a schematic cross-sectional view of a thin film transistor foran electro-luminescence device according to an exemplary embodiment ofthe present invention;

FIG. 2 is a schematic circuit diagram of an electro-luminescence deviceaccording to an exemplary embodiment of the present invention;

FIG. 3 is a schematic plan view of the electro-luminescence device shownin FIG. 2;

FIG. 4 is a cross-sectional view taken along the line A-A′ of FIG. 3;

FIG. 5 is a schematic view showing first and second gate electrodesformed with a first mask according to an embodiment of the presentinvention;

FIG. 6 is a schematic cross-sectional view taken along the line B-B′ ofFIG. 5;

FIG. 7 is a schematic view showing first and second etch stop patternsformed with a second mask according to an embodiment of the presentinvention;

FIG. 8 is a schematic cross-sectional view taken along the line C-C′ ofFIG. 7;

FIG. 9 is a schematic view showing first and second source electrodes,and first and second drain electrodes formed with a third mask accordingto an embodiment of the present invention;

FIG. 10 is a schematic cross-sectional view taken along the line D-D′ ofFIG. 9;

FIG. 11 is a schematic view showing a contact hole formed at first andsecond drain electrodes formed with a fourth mask according to anembodiment of the present invention;

FIG. 12 is a schematic cross-sectional view taken along the line E-E′ of

FIG. 13 is a schematic view showing a connecting electrode and an anodeelectrode formed with a fifth mask according to an embodiment of thepresent invention; and

FIG. 14 is a schematic cross-sectional view taken along the line F-F′ ofFIG. 13.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

FIG. 1 is a schematic cross-sectional view of a thin film transistor foran electro-luminescence device according to an exemplary embodiment ofthe present invention.

Referring to FIG. 1, a thin film transistor 100 according to the presentembodiment of the invention includes a first electrode 110, aninsulating layer 120, a semiconductor pattern 130, an etch stop layer140, a second electrode 150 and a third electrode 160. The thin filmtransistor 100 is formed on a substrate 10.

The first electrode 110 is formed on the substrate 110 using aconductive thin film layer having low electric resistance, such as, forexample, aluminum, aluminum alloy, copper, or copper alloy. The firstelectrode 110 receives a voltage higher than a threshold voltage of thesemiconductor pattern 130 to lower the electric resistance of thesemiconductor pattern 130.

The insulating layer 120 is formed over the substrate 10 to cover thefirst electrode 110. The insulating layer 120 is formed of silicon oxide(SiO_(X)), silicon nitride (SiN_(X)) or the like.

The semiconductor pattern 130 is formed on the insulating layer 120. Thesemiconductor pattern 130 includes a first semiconductor pattern 132, asecond semiconductor pattern 134 and a third semiconductor pattern 136.The first semiconductor pattern 132 is formed by patterning an amorphoussilicon film, and the second and third semiconductor patterns 134 and136 are formed by patterning an n⁺ amorphous silicon film doped withn-type dopant.

The first semiconductor pattern 132 is formed on the insulating layer120 to cover the first electrode 110. The first semiconductor pattern132 has an area wider than that of the first electrode 110. The firstsemiconductor pattern 132 has an electric resistance that is loweredwhen a voltage higher than the threshold voltage is applied to the firstelectrode 110.

The second and third semiconductor patterns 134 and 136 are formed onthe first semiconductor pattern 1321 and spaced apart from each other bya predetermined distance.

The etch stop layer 140 is formed on the first semiconductor pattern132. A first end 140 a of the etch stop layer 140 is overlapped with aportion of the second semiconductor pattern 134 and a second end 140 bof the etch stop layer 140 is overlapped with a portion of the thirdsemiconductor pattern 136. The etch stop layer 140 may prevent anetch-back of the first semiconductor pattern 132 during patterning ofthe second and third semiconductor patterns 134 and 136, therebypreventing change in an amount of current flowing through the firstsemiconductor pattern 132. The etch stop layer 140 has a thickness ofabout 100 Å to about 200 Å, and is made of for example, silicon nitrideor silicon oxide.

The second and third electrodes 150 and 160 are electrically connectedto the second and third semiconductor patterns 134 and 136,respectively, The second electrode 150 has the same area and shape asthe second semiconductor pattern 134 and the third electrode 160 has thesame area and shape as the third semiconductor pattern 136. The secondand third electrodes 150 and 160 are formed of, for example, aluminum oraluminum alloy. The third electrode 160 is connected to an anodeelectrode 170 disposed at a side of an organic light emitting layer 180and provides a driving current output to the anode electrode 170.

According to this exemplary embodiment of the invention, the etch stoplayer is formed between the n⁺ amorphous silicon film and the amorphoussilicon film disposed under the n⁺ amorphous silicon film to prevent theamorphous silicon film from being etched while the n⁺ amorphous siliconfilm is patterned. Thus, the current amount flowing through theamorphous silicon film is not changed, thereby preventing deteriorationof display quality.

FIG. 2 is a schematic circuit diagram of an electro-luminescence deviceaccording to an exemplary embodiment of the present invention. FIG. 3 isa schematic plan view of the electro-luminescence device shown in FIG.2. FIG, 4 is a cross-sectional view taken along the line A-A′ of FIG. 3,

Referring to FIGS. 2 to 4, an electro-luminescence device 200 is formedon the substrate 10 shown in FIG. 2. The electro-luminescence device 200includes a switching transistor TFT1, a driving transistor TFT2, astorage capacitor Cst, a gate bus line GBL, a data bus line DBL, a powersupply line PSL and an electro-luminescence element EL.

The gate bus line GBL extends in a first direction D1. The gate bus lineGBL is formed of a material having low electric resistance, such as, forexample, aluminum or aluminum alloy. The electro-luminescence device 200may include a plurality of gate bus lines GBL. For example, when theelectro-luminescence device 200 has a resolution of 1024×768, theelectro-luminescence device 200 includes 768 units of gate bus linesGBL. Each of the gate bus lines GBL extend in the first direction D1,and are arranged parallel to one another in a second direction D2substantially perpendicular to the first direction D1. The gate bus lineGBL further includes a gate electrode GE that extends in the seconddirection D2 from the gate bus line GBL. when the electro-luminescencedevice 200 has a resolution of 1024×768, 1024×3 units of gate electrodesGE are formed at the gate bus line GBL.

The data bus line DBL extends in the second direction D2. The data busline DBL is formed of a material having low electric resistance, such asfor example, aluminum or aluminum alloy. The electro-luminescence device200 may include a plurality of data bus lines DBL. For example, when theelectro-luminescence device 200 has a resolution of 1024×768, theelectro-luminescence device 200 includes 1024×3 units of data bus linesDBL. Each of the data bus lines DBL extends in the second direction D2,and are arranged parallel to one another in the first direction D1. Thedata bus line DBL further includes a source electrode SE that extendsfrom the data bus line DBL in the first direction D1. When theelectro-luminescence device 200 has a resolution is of 1024×768, 768units of source electrodes SE are formed at the data bus line DBL.

The power supply line PSL is formed adjacent to each data bus lines DBL.The power supply line PSL extends in the second direction D2, andreceives a direct current signal Vdd.

The switching transistor TFT1 and driving transistor TFT2 are formed atevery pixel area 210 defined by the gate bus line GBL, data bus line DBLand power supply line PSL.

The switching transistor TFT1 includes a first gate electrode G1, afirst semiconductor pattern C1, a first etch stop pattern ES1 a firstsource electrode S1 and a first drain electrode D1.

The first gate electrode G1 is electrically connected to the gateelectrode GE extending from the gate bus line GBL.

The first semiconductor pattern C1 is disposed on the first gateelectrode G1. Referring to FIG. 4, the first semiconductor pattern C1 isinsulated from the first gate electrode G1 by an insulating layer 220.The first semiconductor pattern C1 includes a first amorphous siliconpattern ASP1 a The first n⁺ amorphous silicon pattern nASP1 and a secondn⁺ amorphous silicon pattern nASP2. In FIG. 2, the first semiconductorpattern C1 is the amorphous silicon pattern formed by patterning anamorphous silicon thin layer. The first n⁺ amorphous silicon patternnASP1 and second n⁺ amorphous silicon pattern nASP2 are disposed on thefirst amorphous silicon pattern ASP1, and spaced apart from each otherwith a predetermined distance. The first n⁺ amorphous silicon patternnASP1 and second n⁺ amorphous silicon pattern nASP2 are formed bypatterning an n⁺ amorphous silicon thin layer into which a dopant isinjected.

The first etch stop pattern ES1 is disposed between the first amorphoussilicon pattern ASP1 and first and second n⁺ amorphous silicon patternsnASP1 and nASP2. The first etch stop pattern ES1 may prevent the firstamorphous silicon pattern ASP1 from being damaged or etched when thefirst n⁺ amorphous silicon pattern nASP1 and second n⁺ amorphous siliconpattern nASP2 are formed, thereby preventing a change in the amount ofcurrent flowing through the first amorphous silicon pattern ASP1.

The first source electrode SI is disposed on the first n+ amorphoussilicon pattern nASP1 and electrically connected to the first n⁺amorphous silicon pattern nASP1. A portion of the first source electrodeS1 is electrically connected to the source electrode SE extended fromthe data bus line DBL.

The drain electrode D1 is disposed on the second n⁺ amorphous siliconpattern nASP2, and electrically connected to the second n⁺ amorphoussilicon pattern nASP2.

As shown in FIG. 2, the driving transistor TFT2 is disposed in the pixelarea 210. The driving transistor TFT2 includes a second gate electrodeG2, a second semiconductor pattern C2, a second etch stop pattern ES2, asecond source electrode 32 and a second drain electrode D2.

The second gate electrode G2 is electrically connected to the firstdrain electrode D1 of the switching transistor TFT1.

The second semiconductor pattern C2 is disposed on the second gateelectrode G2. The second semiconductor pattern C2 is insulated from thesecond gate electrode G2 by the insulating layer 220. The secondsemiconductor pattern C2 includes a second amorphous silicon patternASP2, a third n⁺ amorphous silicon pattern nASP3 and a fourth n⁺amorphous silicon pattern nASP4. The second semiconductor pattern C2 isformed by patterning the amorphous silicon thin layer. The third n⁺amorphous silicon pattern nASP3 and fourth n⁺ amorphous silicon patternnASP4 are disposed on the second amorphous silicon pattern ASP2, andspaced apart from each other with a predetermined distance. The third n⁺amorphous silicon pattern nASP3 and fourth n⁺ amorphous silicon patternnASP4 are formed by patterning an n⁺ amorphous silicon thin layer intowhich a dopant is injected.

The second etch stop pattern ES2 is disposed between the secondamorphous silicon pattern ASP2 and third and fourth n⁺ amorphous siliconpatterns nASP3 and nASP4. The second etch stop pattern ES2 may preventthe second amorphous silicon pattern ASP2 from being damaged or etchedwhen the third n⁺ amorphous silicon pattern nASP3 and fourth n⁺amorphous silicon pattern nASP4 are formed, thereby preventing a changein the amount of current flowing through the second amorphous siliconpattern ASP2.

The second source electrode S2 is disposed on the third n+ amorphoussilicon pattern nASP3, and electrically connected to the power supplyline PSL.

The second drain electrode D2 is disposed on the fourth n⁺ amorphoussilicon pattern nASP4, and electrically connected to an organicelectro-luminescence element 300.

The storage capacitor Cst includes a first capacitor Cst1 of the secondgate electrode G2, a second capacitor Cst2 of the power supply line PSLand a dielectric layer disposed between the first and second capacitorsCst1 and Cst2. The dielectric layer includes the insulating layer 220.The storage capacitor Cst turns on the second gate electrode G2 during aframe.

The organic electro-luminescence element 300 includes a connectingelectrode 305, an anode electrode 310, an organic light emitting layer320 and a cathode electrode 330. The reference numerals “340” and “350”indicate a first inter-insulating layer and a second inter-insulatinglayer, respectively.

The connecting electrode 305 connects the first drain electrode D1 ofthe switching transistor TFT1 to the second gate electrode G2. Theconnecting electrode 305 is formed of the same material as the anodeelectrode 310.

The anode electrode 310 is connected to the second drain electrode D2 ofthe driving transistor TFT2 so as to receive the driving current fromthe power supply line PSL. The anode electrode 310 is made of atransparent conductive material, such as, for example, indium tin oxideor indium zinc oxide.

The organic light emitting layer 320 includes one of a red organic lightemitting material, a green organic light emitting material and a blueorganic light emitting material. The red, green and blue light emittingmaterials are disposed between the anode and cathode electrodes 310 and330.

The cathode electrode 330 facing the anode electrode 310 includes ametal thin layer made of, for example, aluminum or aluminum alloy.

According to this exemplary embodiment of the present invention, theelectro-luminescence device may prevent the amorphous silicon pattern ofthe thin film transistor disposed at the pixel area from being damagedor etched when the n⁺ amorphous silicon pattern is formed on theamorphous silicon pattern.

FIGS. 5-14 show a method of fabricating an electro-luminescence deviceaccording to an embodiment of the invention.

FIG. 5 is a schematic view showing first and second gate electrodesformed with a first mask according to an embodiment of the invention.FIG. 6 is a schematic cross-sectional view taken along the line B-B′ ofFIG. 5.

Referring to FIGS. 5 and 6, a gate metal thin layer is formed over thesubstrate 10 by a chemical vapor deposition method or a sputteringmethod. A photoresist layer is coated on the gate metal thin layer. Thephotoresist layer is patterned using a first pattern mask to form aphotoresist pattern on the gate metal thin layer. The gate metal thinlayer is etched using the photoresist pattern as a mask, and thephotoresist pattern is removed to simultaneously form the gate bus lineGBL including the gate electrode GE and the second gate electrode G2including the first capacitor electrode Cst1 of the storage capacitorCst.

The gate bus line GBL formed using the first pattern mask extends in thefirst direction D1 on the substrate 10. The gate electrode GE extendsfrom the gate bus line GBL in the second direction D2. A portion of thegate electrode GE operates as the first gate electrode G1. The secondgate electrode G2 is formed at a position spaced apart from the gateelectrode GE by a predetermined distance. The second gate electrode G2extends in the first direction D1 and the first capacitor electrode Cst1extends from the second gate electrode G2. The first capacitor electrodeCst1 extends in the second direction D2 and is spaced apart from thegate bus line GBL by a predetermined distance.

FIG. 7 is a schematic view showing first and second etch stop layersformed with a second mask according to an embodiment of the invention.FIG. 8 is a schematic cross-sectional view taken along the line C-C′ ofFIG. 7.

Referring to FIGS. 7 and 8, the insulating layer 220 is formed over thesubstrate 10. The insulating layer 220 covers the gate bus line GBL onwhich the gate electrode GE is formed, second gate electrode G2 andfirst capacitor electrode Cst1.

Referring to FIG. 8, a first semiconductor layer 230 is formed on theinsulating layer 220 by a chemical vapor deposition method. The firstsemiconductor layer 230 includes an amorphous silicon thin layer. Anetch stop layer is formed over the first semiconductor layer 230, andthen a photoresist layer is formed on the etch stop layer using a spincoating method or a slit coating method. The photoresist layer ispatterned using a second pattern mask to form a photoresist pattern onthe etch stop layer. The first and second etch stop patterns ES1 and ES2are formed on the first semiconductor layer 230 by etching the etch stoplayer using the photoresist layer as a mask. The first etch stop patternES1 is formed on a portion of the semiconductor layer 230 correspondingto the first gate electrode G1, and the second etch stop pattern ES2 isformed on a portion of the semiconductor layer 230 corresponding to thesecond gate electrode G2.

FIG. 9 is a schematic view showing first and second source electrodes,and first and second drain electrodes formed with a third mask accordingto an embodiment of the invention. FIG. 10 is a schematiccross-sectional view taken along the line D-D′ of FIG. 9.

Referring to FIGS. 9 and 10, a second semiconductor layer is formed onthe first semiconductor layer 230 shown in FIG. 8 by a chemical vapordeposition method to cover the first and second etch stop patterns ES1and ES2. A source/drain metal thin layer is formed on the secondsemiconductor layer using a chemical vapor deposition method or asputtering method, A photoresist layer is formed on the source/drainmetal thin layer by a spin coating method or a slit coating method. Thephotoresist layer is patterned using a third pattern mask to form aphotoresist pattern on the source/drain metal thin layer. Thephotoresist pattern has a lower height at center portions of the firstand second etch stop patterns ES1 and ES2 than at end portions thereof.To differentiate the height at the center portions from the endportions, the photoresist pattern at center portions of the first andsecond etch stop patterns ES1 and ES2 are exposed with a slit exposuremethod using the third pattern mask. When the source/drain metal thinlayer is patterned using the photoresist pattern as a mask, the data busline DBL, first drain electrode D1, power supply line PSL on which thesecond source electrode S2 is formed, and second drain electrode D2 aresimultaneously formed on the substrate 10. The second semiconductorlayer and first semiconductor layer 230 are patterned using the data busline DBL including the first source electrode S1, first drain electrodeD1, power supply line PSL including the second source electrode S2 andthe second drain electrode D2 as a mask. The second semiconductor layerhas the same shape as that of the data bus line DBL including the firstsource electrode S1, first drain electrode D1, power supply line PSLincluding the second source electrode S2 and the second drain electrodeD2. Thus, the first n⁺ amorphous silicon pattern nASP1 and second n⁺amorphous silicon pattern nASP2 are formed under the first sourceelectrode S1 and first drain electrode D1, respectively. Also, the thirdn⁺ amorphous silicon pattern nASP3 and fourth n⁺ amorphous siliconpattern nASP4 are formed under the second source electrode S2 and seconddrain electrode D2, respectively. The first n⁺ amorphous silicon patternnASP1 and second n⁺ amorphous silicon pattern nASP2 are spaced apartfrom each other, and the third n⁺ amorphous silicon pattern nASP3 andfourth n⁺ amorphous silicon pattern nASP4 are spaced apart from eachother.

The first semiconductor layer 230 has the same shape as that of the databus line DBL including the first source electrode S1, first drainelectrode D1, power supply line PSL including the second sourceelectrode S2 and the second drain electrode D2. Thus, the firstamorphous silicon pattern ASP1 is formed under the first n⁺ amorphoussilicon pattern nASP1 and second n⁺ amorphous silicon pattern nASP2, andthe second amorphous silicon pattern ASP2 is formed under the third n⁺amorphous silicon pattern nASP3 and fourth n⁺ amorphous silicon patternnASP4. The first n⁺ amorphous silicon pattern nASP1, first etch stoppattern ES1 and second n⁺ amorphous silicon pattern nASP2 may prevent acenter portion of the first amorphous silicon pattern ASP1 from beingetched. Also, the third n⁺ amorphous silicon pattern nASP3, second etchstop pattern ES2 and fourth n⁺ amorphous silicon pattern nASP4 mayprevent a center portion of the second amorphous silicon pattern ASP2from being etched.

FIG. 11 is a schematic view showing contact holes at first and seconddrain electrodes formed with a fourth mask according to an embodiment ofthe invention. FIG. 12 is a schematic cross-sectional view taken alongthe line E-E′ of FIG. 11.

Referring to FIGS. 11 and 12, the first inter-insulating layer 340 isformed over the substrate 10 by a chemical vapor deposition method. Aphotoresist layer is formed on the first inter-insulating layer 340using a spin coating method or a slit coating method. The photoresistlayer is patterned using a fourth pattern mask to form a photoresistpattern on the substrate 10. A first contact hole CT1 partially exposingthe first drain electrode D1, a second contact hole CT2 partiallyexposing the second gate electrode G2 and a third contact hole CT3partially exposing the second drain electrode 92 are formed at the firstinter-insulating layer 340 by etching the first inter-insulating layer340 using the photoresist pattern as a mask.

FIG. 13 is a schematic view showing a connecting electrode and an anodeelectrode formed with a fifth mask according to an embodiment of theinvention. FIG. 14 is a schematic cross-sectional view taken along theline F-F′ of FIG. 13.

Referring to FIGS. 13 and 14, a transparent conductive anode thin layeris formed over the first inter-insulating layer 340. A photoresist layeris coated on the anode thin layer by a spin coating method or a slitcoating method, and a fifth pattern mask is aligned with the substrate10. The photoresist layer is patterned using the fifth mask to form aphotoresist pattern on the anode thin layer. The anode electrode 310 andconnecting electrode 305 are formed by etching the anode thin layerusing the photoresist pattern as a mask. The anode electrode 310 isconnected to the second drain electrode D2 through the third contacthole CT3. Also, the connecting electrode 305 is connected to the firstdrain electrode D1 and second gate electrode G2 through the firstcontact hole CT1 and second contact hole CT2, respectively.

Referring to FIGS. 3 and 4 again the second inter-insulating layer 350is formed on the first inter-insulating layer 340, and a photoresistlayer is formed on the second inter-insulating layer 350 using a spincoating method or a slit coating method. After aligning a sixth patternmask with the substrate 10, the photoresist layer is patterned using thesixth pattern mask to form a photoresist pattern on the secondinter-insulating layer 350.

The second inter-insulating layer 350 is patterned using the photoresistpattern to form an opening in the second inter-insulating layer 350,through which the anode electrode 310 is exposed.

The organic light emitting layer including the red, green and blueorganic light emitting layers is formed on the anode electrode 310, andthe cathode electrode 330 is formed on the organic light emitting layer320 by patterning a metal thin layer.

Although not shown in FIGS. 3 and 4, to protect the organic lightemitting layer 320 from oxygen or humidity, a sealing cap may be furtherformed at the cathode electrode 330.

An electro-luminescence device according to various exemplaryembodiments of the invention may prevent distortion of the drivingcurrent caused by a damaged semiconductor layer of a thin filmtransistor, thereby improving display quality of the image.

While the present invention has been described in detail with referenceto the preferred embodiments, it is to be understood that the inventionis not limited to the disclosed embodiments, but, on the contrary isintended to cover various modifications and equivalent arrangementsincluded within the spirit and scope of the appended claims.

1. An electro-luminescence device, comprising: an electro-luminescenceelement; and a thin film transistor electrically connected to theelectro-luminescence element, the thin film transistor comprising: agate electrode formed over a substrate; an insulating layer formed overthe gate electrode; a first semiconductor pattern formed over theinsulating layer; an etch stop layer formed over the first semiconductorlayer; a second semiconductor pattern formed over the etch stop layer atone side of the etch stop layer; a third semiconductor pattern formedover the etch stop layer at another side of the etch stop layer; asource electrode formed over the second semiconductor pattern; and adrain electrode formed over the third semiconductor pattern.
 2. Theelectro-luminescence device of claim 1, wherein the electro-luminescenceelement comprises an anode electrode; a light emitting layer formed overthe anode electrode; and a cathode electrode formed over the lightemitting layer.
 3. The electro-luminescence device of claim 2, whereinthe anode electrode is electrically connected to the drain electrode ofthe thin film transistor.
 4. The electro-luminescence device of claim 2wherein the light emitting layer is an organic light emitting layer. 5.An electro-luminescence device comprising: a gate bus line extending ina first direction over a substrate; a data bus line extending in asecond direction over the substrate; a power supply line extendingparallel to the data bus line over the substrate; a switching transistorelectrically connected to the gate bus line, the switching transistorcomprising: a first gate electrode extending from the gate bus line; afirst semiconductor pattern formed over the first gate electrode; afirst etch stop layer formed over the first semiconductor pattern; asecond semiconductor pattern formed over the first semiconductor patternat one side of the first etch stop layer; a third semiconductor patternformed over the first semiconductor pattern at another side of the firstetch stop layer; a first source electrode formed over the secondsemiconductor pattern, the first source electrode extending from thedata bus line; and a first drain electrode formed over the thirdsemiconductor pattern; a driving transistor electrically connected tothe power supply tine, the driving transistor comprising: a second gateelectrode electrically connected to the first drain electrode of theswitching transistor; a fourth semiconductor pattern formed over thesecond gate electrode; a second etch stop layer formed over the fourthsemiconductor pattern; a fifth semiconductor pattern formed over thefourth semiconductor pattern at one side of the second etch stop layer;a sixth semiconductor pattern formed over the fourth semiconductorpattern at another side of the second etch stop layer; a second sourceelectrode formed over the fifth semiconductor layer, the second sourceelectrode extending from the power supply line; and a second drainelectrode formed over the sixth semiconductor layer; anelectro-luminescence element electrically connected to the second drainelectrode of the driving transistor.
 6. The electro-luminescence deviceof claim 5, wherein the electro-luminescence element comprises: an anodeelectrode electrically connected to the second drain electrode of thedriving transistor; a light emitting layer formed over the anodeelectrode; and a cathode electrode formed over the light emitting layer.7. The electro-luminescence device of claim 6 wherein the light emittinglayer is an organic light emitting layer.
 8. The electro-luminescencedevice of claim 5, wherein the first and fourth semiconductor patternsare formed of an amorphous silicon film.
 9. The electro-luminescencedevice of claim 5, wherein the second is third, fifth and sixthsemiconductor patterns are formed of an n⁺ amorphous silicon film. 10.The electro-luminescence device of claim 5, wherein the first and secondetch stop layers have a thickness of about 100 Å to about 200 Å.
 11. Theelectro-luminescence device of claim 5, further comprising: a connectingelectrode that connects the first drain electrode to the second gateelectrode.